ON Semiconductor
MJD253T4G
Bipolar Transistors - BJT 4A 100V 12.5W PNP
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MJD253
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 0.6 V
- Maximum DC Collector Current
- 4 A
- Gain Bandwidth Product fT
- 40 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 2.38 mm
- Length
- 6.73 mm
Show more parameters (4)
- Width
- 6.22 mm
- Continuous Collector Current
- 4 A
- DC Collector/Base Gain hfe Min
- 40
- Pd - Power Dissipation
- 12.5 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.