ROHM Semiconductor
RGT30NS65DGC9
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- IGBT Transistors
- Package
- TO-262-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Maximum Gate Emitter Voltage
- 30 V
- Continuous Collector Current at 25 C
- 30 A
- Pd - Power Dissipation
- 133 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Gate-Emitter Leakage Current
- 200 nA
- Part # Aliases
- RGT30NS65D(TO-262)
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.