SemiQ
GCMX040B120S1-E1
MOSFET Modules 1200V SiC MOSFET Power Module
Basic Information
View Datasheet ↗- Manufacturer
- SemiQ
- Product Category
- MOSFET Modules
- Package
- SOT-227-4
- Mounting Style
- Screw Mount
- Packaging
- Tube
Technical Specifications
16 parameters- Technology
- SiC
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 57 A
- Rds On - Drain-Source Resistance
- 52 mOhms
- Vgs - Gate-Source Voltage
- - 25 V, + 25 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 242 W
- Country of Origin
- PH
- Fall Time
- 12 ns
Show more parameters (4)
- Rise Time
- 5 ns
- Typical Turn-Off Delay Time
- 21 ns
- Typical Turn-On Delay Time
- 15 ns
- Vf - Forward Voltage
- 3.8 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.