STMicroelectronics
STN3P10F6
MOSFETs P-channel -100 V, 0.136 Ohm typ., -3 A STripFET F6 Power MOSFET in a SOT-223 pac
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- MOSFETs
- Package
- TO-223-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
19 parameters- Technology
- Si
- Transistor Polarity
- P-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 3 A
- Rds On - Drain-Source Resistance
- 180 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Qg - Gate Charge
- 16.5 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 3.3 W
Show more parameters (7)
- Channel Mode
- Enhancement
- Configuration
- Single
- Fall Time
- 4.5 ns
- Rise Time
- 4.8 ns
- Transistor Type
- 1 P-Channel
- Typical Turn-Off Delay Time
- 24 ns
- Typical Turn-On Delay Time
- 10.5 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.