Nexperia
GANE1R8-100QBAZ
GaN FETs GANE1R8-100QBA/SOT8091/VQFN7
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- GaN FETs
- Package
- VQFN-7
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
19 parameters- Transistor Polarity
- P-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 100 A
- Rds On - Drain-Source Resistance
- 1.8 mOhms
- Vgs - Gate-Source Voltage
- 6 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Qg - Gate Charge
- 22 nC
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 65 W
- Channel Mode
- Enhancement
Show more parameters (7)
- Configuration
- Single
- Country of Origin
- CN
- Moisture Sensitive
- Yes
- Product
- GaN FETs
- Technology
- GaN
- Transistor Type
- 1 P-Channel
- Part # Aliases
- 934667635332
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.