Central Semiconductor
MPS3396 TIN/LEAD
Bipolar Transistors - BJT NPN 25Vcbo 25Vceo 5.0Vebo 2.0mA 10pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MPS3396
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
7 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Base Voltage VCBO
- 25 V
- Emitter- Base Voltage VEBO
- 5 V
- DC Collector/Base Gain hfe Min
- 90 at 4.5 V, 2 mA
- DC Current Gain hFE Max
- 500 at 4.5 V, 2 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.