Microchip / Microsemi
APT35GN120L2DQ2G
IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- IGBT Transistors
- Package
- TO-264MAX-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 1.7 V
- Maximum Gate Emitter Voltage
- 30 V
- Continuous Collector Current at 25 C
- 94 A
- Pd - Power Dissipation
- 379 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current Ic Max
- 94 A
- Height
- 5.21 mm
- Length
- 26.49 mm
Show more parameters (5)
- Operating Temperature Range
- - 55 C to + 150 C
- Width
- 20.5 mm
- Continuous Collector Current
- 94 A
- Gate-Emitter Leakage Current
- 600 nA
- Unit Weight
- 0.373904 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.