Toshiba
TK31E60W,S1VX
MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- TK31E60W
- Package
- TO-220-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 30.8 A
- Rds On - Drain-Source Resistance
- 73 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 3.7 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 86 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 230 W
Show more parameters (12)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- DTMOSIV
- Height
- 15.1 mm
- Length
- 10.16 mm
- Transistor Type
- 1 N-Channel
- Width
- 4.45 mm
- Fall Time
- 8.5 ns
- Rise Time
- 32 ns
- Typical Turn-Off Delay Time
- 165 ns
- Typical Turn-On Delay Time
- 70 ns
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.