ChipSourceHub

Renesas / Intersil

HFA3127BZ

RF Bipolar Transistors W/ANNEAL TXARRAY 5X NPN 16N MIL

Basic Information

View Datasheet ↗
Manufacturer
Renesas Electronics
Brand
Renesas / Intersil
Product Category
RF Bipolar Transistors
Series
HFA3127
Package
SOIC-Narrow-16
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

22 parameters
Transistor Type
Bipolar
Technology
Si
Transistor Polarity
NPN
DC Collector/Base Gain hfe Min
40
Collector- Emitter Voltage VCEO Max
8 V
Emitter- Base Voltage VEBO
5.5 V
Continuous Collector Current
0.065 A
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 125 C
Configuration
Quint
Collector- Base Voltage VCBO
12 V
DC Current Gain hFE Max
40 at 10 mA at 2 V
Show more parameters (10)
Height
1.5 mm
Length
10 mm
Operating Frequency
8000 MHz (Typ)
Type
RF Bipolar Small Signal
Width
4 mm
Gain Bandwidth Product fT
8000 MHz (Typ)
Maximum DC Collector Current
0.065 A
Moisture Sensitive
Yes
Pd - Power Dissipation
150 mW
Unit Weight
0.004938 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

HFA3127BZ Specifications and Datasheet | ChipSourceHub