Infineon Technologies
IPD110N12N3GATMA1
MOSFET MV POWER MOS
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- OptiMOS 3
- Package
- PG-TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 120 V
- Id - Continuous Drain Current
- 75 A
- Rds On - Drain-Source Resistance
- 11 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 49 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 136 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- OptiMOS
- Height
- 2.3 mm
- Length
- 6.5 mm
- Transistor Type
- 1 N-Channel
- Width
- 6.22 mm
- Forward Transconductance - Min
- 42 S
- Fall Time
- 8 ns
- Rise Time
- 16 ns
- Typical Turn-Off Delay Time
- 24 ns
- Typical Turn-On Delay Time
- 16 ns
- Part # Aliases
- G IPD110N12N3 SP001127808
- Unit Weight
- 0.017284 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.