Vishay Semiconductors
SQ3419EV-T1_GE3
MOSFETs P Ch -40Vds 20Vgs AEC-Q101 Qualified
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- MOSFETs
- Series
- SQ
- Package
- TSOP-6
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
24 parameters- Technology
- Si
- Transistor Polarity
- P-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Id - Continuous Drain Current
- 6.9 A
- Rds On - Drain-Source Resistance
- 48 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Qg - Gate Charge
- 7.5 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 5 W
Show more parameters (12)
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Tradename
- TrenchFET
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 31 ns
- Rise Time
- 24 ns
- Transistor Type
- 1 P-Channel
- Typical Turn-Off Delay Time
- 26 ns
- Typical Turn-On Delay Time
- 8 ns
- Part # Aliases
- SQ3419EV-T1_BE3
- Unit Weight
- 0.000705 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.