Bourns
TISP61521DR-S
SCRs Dual P Gate Forward Conducting
Basic Information
View Datasheet ↗- Manufacturer
- Bourns
- Product Category
- SCRs
- Series
- TISP61521
- Package
- SOIC-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Breakover Current IBO Max
- 15 A
- Rated Repetitive Off-State Voltage VDRM
- - 175 V
- Off-State Leakage Current @ VDRM IDRM
- 5 uA
- Vf - Forward Voltage
- 2 V
- Gate Trigger Voltage - Vgt
- 2 V
- Gate Trigger Current - Igt
- 3 mA
- Holding Current Ih Max
- - 150 mA
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Current Rating
- 50 uA
- Height
- 1.55 mm
- Length
- 5 mm
Show more parameters (5)
- Type
- Dual Forward Conducting P-Gate Thyristors
- Width
- 4 mm
- Non Repetitive On-State Current
- 15 A
- Tradename
- TISP
- Unit Weight
- 0.017870 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.