Vishay / Siliconix
SIB912DK-T1-GE3
MOSFET 20V Vds 8V Vgs PowerPAK SC-75
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- SIB
- Package
- PowerPAK-SC75-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 1.5 A
- Rds On - Drain-Source Resistance
- 216 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 400 mV
- Vgs - Gate-Source Voltage
- 8 V
- Qg - Gate Charge
- 3 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 3.1 W
Show more parameters (14)
- Configuration
- Dual
- Channel Mode
- Enhancement
- Tradename
- TrenchFET, PowerPAK
- Height
- 0.75 mm
- Length
- 1.6 mm
- Transistor Type
- 2 N-Channel
- Width
- 1.6 mm
- Forward Transconductance - Min
- 3 S
- Fall Time
- 8 ns
- Rise Time
- 10 ns
- Typical Turn-Off Delay Time
- 24 ns
- Typical Turn-On Delay Time
- 5 ns
- Part # Aliases
- SIB912DK-GE3
- Unit Weight
- 0.003386 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.