Texas Instruments
CSD19535KTTT
MOSFET 100V N-Channel NexFET Power MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Texas Instruments
- Product Category
- MOSFET
- Series
- CSD19535KTT
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- E
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 200 A
- Rds On - Drain-Source Resistance
- 3.4 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2.2 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 75 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 300 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- NexFET
- Height
- 19.7 mm
- Length
- 9.25 mm
- Transistor Type
- 1 N-Channel
- Width
- 10.26 mm
- Forward Transconductance - Min
- 301 S
- Fall Time
- 15 ns
- Moisture Sensitive
- Yes
- Rise Time
- 18 ns
- Typical Turn-Off Delay Time
- 21 ns
- Typical Turn-On Delay Time
- 9 ns
- Unit Weight
- 0.068643 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.