Infineon Technologies
IMDQ75R090M1HXUMA1
SiC MOSFETs SILICON CARBIDE MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- SiC MOSFETs
- Series
- 750V G1
- Package
- HDSOP-22
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
24 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 750 V
- Id - Continuous Drain Current
- 24 A
- Rds On - Drain-Source Resistance
- 117 mOhms
- Vgs - Gate-Source Voltage
- - 5 V, + 23 V, - 10 V, + 25 V
- Vgs th - Gate-Source Threshold Voltage
- 5.6 V
- Qg - Gate Charge
- 15 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 128 W
- Channel Mode
- Enhancement
Show more parameters (12)
- Tradename
- CoolSiC
- Configuration
- Single
- Country of Assembly
- MY
- Country of Diffusion
- AT
- Country of Origin
- AT
- Fall Time
- 10 ns
- Moisture Sensitive
- Yes
- Rise Time
- 7 ns
- Technology
- SiC
- Typical Turn-Off Delay Time
- 13 ns
- Typical Turn-On Delay Time
- 6 ns
- Part # Aliases
- IMDQ75R090M1H SP005588268
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.