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ON Semiconductor

NTMFS6H800NLT1G

MOSFET 80V 224A 1.8mOhm Single N-Channel

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Product Category
MOSFET
Package
DFN-5
Mounting Style
SMD/SMT
Packaging
Reel
RoHS
Compliant (source record)

Technical Specifications

20 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
80 V
Id - Continuous Drain Current
224 A
Rds On - Drain-Source Resistance
1.9 mOhms
Vgs th - Gate-Source Threshold Voltage
2 V
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
112 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
214 W
Show more parameters (8)
Configuration
Single
Channel Mode
Enhancement
Transistor Type
1 N-Channel
Forward Transconductance - Min
250 S
Fall Time
163 ns
Rise Time
153 ns
Typical Turn-Off Delay Time
118 ns
Typical Turn-On Delay Time
20 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NTMFS6H800NLT1G Specifications and Datasheet | ChipSourceHub