PI6CL10804WE
Diodes Incorporated
Source-listed alternatives: PI6CL10804E2WEX. Engineering review required.Technical reference search
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2 recordsPI6CL10804WEX
Diodes Incorporated
Source-listed alternatives: PI6CL10804E2WEX. Engineering review required.Technical reference
Part Catalog Results
Part numbers, specifications, and documents are reference data only. They do not represent current stock, price, lead time, supply source, or replacement conclusions.
A3T4GF30BBF-JR TR
Zentel Japan
DRAM DDR3 4Gb, 512Mx8, 2133 at CL14, 1.5V, FBGA-78
Semiconductors > Memory ICs > DRAMA3T4GF30BBF-JRI
Zentel Japan
DRAM DDR3 4Gb, 512Mx8, 2133 at CL14, 1.5V, FBGA-78, Ind. Temp.
Semiconductors > Memory ICs > DRAMA3T4GF30BBF-JRI TR
Zentel Japan
DRAM DDR3 4Gb, 512Mx8, 2133 at CL14, 1.5V, FBGA-78, Ind. Temp.
Semiconductors > Memory ICs > DRAMA3T4GF30BBF-JRL
Zentel Japan
DRAM DDR3L 4Gb, 512Mx8, 2133 at CL14, 1.35V, FBGA-78
Semiconductors > Memory ICs > DRAMA3T4GF30BBF-JRL TR
Zentel Japan
DRAM DDR3L 4Gb, 512Mx8, 2133 at CL14, 1.35V, FBGA-78
Semiconductors > Memory ICs > DRAMA3T4GF30CBF-HP
Zentel Japan
DRAM DDR3&DDR3L ECC 4Gb, 512Mx8, 1866 at CL13, 1.35V&1.5V, FBGA-78
Semiconductors > Memory ICs > DRAMA3T4GF30CBF-HP TR
Zentel Japan
DRAM DDR3&DDR3L ECC 4Gb, 512Mx8, 1866 at CL13, 1.35V&1.5V, FBGA-78
Semiconductors > Memory ICs > DRAMA3T4GF30CBF-HPI
Zentel Japan
DRAM DDR3&DDR3L ECC 4Gb, 512Mx8, 1866 at CL13, 1.35V&1.5V, FBGA-78 Ind. Temp.
Semiconductors > Memory ICs > DRAMA3T4GF30CBF-HPI TR
Zentel Japan
DRAM DDR3&DDR3L ECC 4Gb, 512Mx8, 1866 at CL13, 1.35V&1.5V, FBGA-78 Ind. Temp.
Semiconductors > Memory ICs > DRAMA3T4GF40BBF-HP
Zentel Japan
DRAM DDR3&DDR3L 4Gb, 256Mx16, 1866 at CL13, 1.35V&1.5V, FBGA-96
Semiconductors > Memory ICs > DRAM